LP3000P100 p ackaged 2w p ower phemt phone: (408) 988-1845 http:// www.filss.com revised: 1/20/01 fax: (408) 970-9950 email: sales@filss.com features 33 dbm output power at 1-db compression at 15 ghz 8 db power gain at 15 ghz 60% power-added efficiency description and applications the LP3000P100 is a packaged aluminum gallium arsenide / indium gallium arsenide ( algaas/ ingaas) pseudomorphic high electron mobility transistor (phemt). it utilizes a 0 .25 m m x 3000 m m schottky barrier gate, defined by electron-beam photolithography. the recessed ?mushroom? gate structure minimizes parasitic gate-source and gate resistance. the epitaxial structure and processing have been optimized for reliable high-power applications. the lp3000 also features si3n4 passivation and is available in die form or in other packages. the LP3000P100 is designed for medium-power, linear amplification. this device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in satcom uplink transmitters, medium-haul digital radio transmitters, pcs high efficiency amplifiers, and wll systems. electrical specifications @ t ambient = 25 c parameter symbol test conditions min typ max units saturated drain-source current i dss v ds = 2 v; v gs = 0 v 800 975 1100 ma power at 1-db compression p-1db v ds = 8 v; i ds = 50% i dss 31.5 33 dbm power gain at 1-db compression g-1db v ds = 8 v; i ds = 50% i dss 7 8 db power-added efficiency pae v ds = 8 v; i ds = 50% i dss ; p in = 17 dbm 45 % maximum drain-source current i max v ds = 2 v; v gs = 1 v 1700 ma transconductance g m v ds = 2 v; v gs = 0 v 700 900 ms gate-source leakage current i gso v gs = -5 v 15 130 m a pinch-off voltage v p v ds = 2 v; i ds = 5 ma -0.25 -1.2 -2.0 v gate-source breakdown voltage magnitude |v bdgs | i gs = 8 ma -12 -15 v gate-drain breakdown voltage magnitude |v bdgd | i gd = 8 ma -12 -16 v frequency=15 ghz
LP3000P100 p ackaged 2w p ower phemt phone: (408) 988-1845 http:// www.filss.com revised: 1/20/01 fax: (408) 970-9950 email: sales@filss.com absolute maximum ratings parameter symbol test conditions min max units drain-source voltage v ds t ambient = 22 3 c 12 v gate-source voltage v gs t ambient = 22 3 c -4 v drain-source current i ds t ambient = 22 3 c 2xi dss ma gate current i g t ambient = 22 3 c 30 ma rf input power p in t ambient = 22 3 c 700 mw channel operating temperature t ch t ambient = 22 3 c 175 oc storage temperature t stg ? -65 175 oc total power dissipation p tot t ambient = 22 3 c 3.0 w notes: operating conditions that exceed the absolute maximum ratings could result in permanent damage to the device. power dissipation defined as: p tot o (p dc + p in ) ? p out , where p dc : dc bias power p in : rf input power p out : rf output power absolute maximum power dissipation to be de-rated as follows above 25 c: p to t = 3.0w ? (0.020w/ c) x t hs where t hs = heatsink or ambient temperature. this phemt is susceptible to damage from electrostatic discharge. proper precautions should be used when handling these devices. handling precautions to avoid damage to the devices care should be exercised during handling. proper electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. these devices should be treated as class 1a (0-500 v). further information on esd con trol measures can be found in mil-std-1686 and mil-hdbk-263. applications notes & design data applications notes are available from your local filtronic sales representative or directly from the factory. complete design data, including s-parameters, noise data, and large-signal models are available on the filtronic web site.
LP3000P100 p ackaged 2w p ower phemt phone: (408) 988-1845 http:// www.filss.com revised: 1/20/01 fax: (408) 970-9950 email: sales@filss.com package outline ( dimensions in mils) all information and specifications are subject to change without notice.
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